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Advance Product Information
April 5, 2006
6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier
* * * * * * *
TGA2501
Key Features and Performance
34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss Bias Conditions: 8V @ 1.2A 0.25 m Ku pHEMT 2MI Chip dimensions: 4.3 x 2.9 x 0.1 mm (170 x 115 x 4 mils) X-Ku Point-to-Point ECCM
Preliminary Measured Performance
Bias Conditions: VD = 8V ID = 1.2A
30 28 26 S21 S11 S22 20 15 10 5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Primary Applications
* *
S11,S22 (dB) PAE@Psat (%)
S21 (dB)
24 22 20 18 16 14
Frequency (GHz)
36 35 34 33 32 31 30 29 28 27 26 6 7 8 9 10 11 12 13 14 15 16 17 18 Psat PAE 60 55 50 45 40 35 30 25 20 15 10
Psat (dBm)
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
1
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April 5, 2006
Fixtured Performance
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 5 6 7 8 9
TGA2501
S21 (dB)
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 5 6 7 8 9
S21 (dB)
-40C 0C +85C 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
2
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April 5, 2006
Fixtured Performance
0 -2 -4 S11 S22
TGA2501
S11,S22 (dB)
-6 -8 -10 -12 -14 -16 -18 -20 5
40 35 30
8 GHz 11 GHz 13 GHz 15 GHz
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
2600 2400 2200
Pout (dBm)
20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
1800 1600 1400 1200 1000
Pin (dBm)
3
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Id (mA)
25
2000
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April 5, 2006
Fixtured Performance
36.0 35.5 35.0
TGA2501
P2dB Psat
Pout (dBm)
34.5 34.0 33.5 33.0 32.5 32.0
6
40
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
P2dB Psat
35
30
PAE (%)
25
20
15
10 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
4
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April 5, 2006
Fixtured Performance
45 44 43 42
TGA2501
TOI (dBm)
41 40 39 38 37 36 35 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
-6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 13
IMD3 (dBm)
8 GHz 11 GHz 13 GHz 15 GHz
14
15
16
17
18
19
20
21
22
23
24
Pout / Tone (dBm)
5
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April 5, 2006
TGA2501
TABLE I MAXIMUM RATINGS Symbol V I
+ -
Parameter 5/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value 9V -5 V to 0 V 2.0 A 52 mA 26 dBm 14.4 W 150 C 320 C -65 to 150 0C
0 0
Notes 4/ 4/ 6/ 4/ 3/ 4/ 1/ 2/
V
+
| IG | PIN PD TCH TM TSTG 1/ 2/
These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 1.6E+6 to 5.4E+4 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. This current can be doubled by applying gate bias to both gate pads.
TABLE II THERMAL INFORMATION PARAMETER Rjc Thermal Resistance (Channel to Backside) TEST CONDITION VD = 8 V ID = 1.2 A PDIS = 9.6 W Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 144.56 7.77 1.6E+6 TCH (qC) RTjc (qC/W) MTTF (HRS)
3/ 4/ 5/ 6/
6
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April 5, 2006
TGA2501
TABLE III DC PROBE TEST (TA = 25 C, nominal) NOTES 1/ 1/ 1/, 2/ 1/, 2/ 1/, 2/ SYMBOL
MIN
LIMITS
MAX
UNITS 564 636 1.5 30 30 mA mS V V V
IDSS(Q1) GM (Q1) |VP| |VBVGS| |VBVGD|
120 264 0.5 13 13
1/ Q1 is a 1200 m FET 2/ VP, VBVGD, and VBVGS are negative.
TABLE IV RF CHARACTERIZATION TABLE (TA = 25qC, nominal) (Vd = 8V, Id = 1.2A r5%) SYMBOL PARAMETER TEST CONDITION TYPICAL UNITS
Gain
Small Signal Gain
F = 6-18 GHz
24
dB
IRL
Input Return Loss
F = 6-18 GHz
10
dB
ORL
Output Return Loss
F = 6-18 GHz
5
dB
PWR
Output Power @ Pin=+15dBm
F = 6-18 GHz
34.5
dBm
Note: Table IV Lists the RF Characteristics of typical devices as determined by fixtured measurements.
7
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April 5, 2006
TGA2501 Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
8
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Advance Product Information
April 5, 2006
TGA2501 Chip Assembly & Bonding Diagram
1uF or larger capacitors (not shown) should be on the gate and drain line.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
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Advance Product Information
April 5, 2006
TGA2501 Alternative Chip Assembly & Bonding Diagram
1uF or larger capacitors (not shown) should be on the gate and drain line.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
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Advance Product Information
April 5, 2006
TGA2501 Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas Phone : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com

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